SimuLED—engineering
tool for LED and laser diode design and optimization
In brief, SimuLED capabilities include coupled simulation of:
The SimuLED software is based on an advanced multi-scale approach to LED
and LD modeling. The simulator can be used for design and optimization of
various devices operating in UV, IR, and visible spectral ranges, fabricated
from AlGaInN, GaAsP, AlGaInAs, AlGaInP, and ZnMgO semiconductor materials. An
accurate drift-diffusion model is applied to the carrier transport,
recombination, and light emission in the heterostructure, while the current
spreading in an LED/LD die is simulated using the advanced hybrid approach.
This makes computations very fast while reflecting the essential physics of
processes occurring in the LEDs/LDs. The self-heating and current spreading
in the die are simulated self-consistently which is especially important for
optimization of high power devices.
Modular structure of SimuLED package
The SimuLED package consists of 3 compatible software tools: SiLENSe,
SpeCLED, and RATRO.

Fig. 1.
Schematic model of the SimuLED package, simulated phenomena, and
output results
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The SiLENSe
package is designed for 1D drift-diffusion analysis of electron and hole
injection into the active region, and their radiative and non-radiative
recombination. All important recombination channels are taken into account,
including Auger recombination and recombination on threading dislocations
inherent in Group-III nitride heterostructures. The software predicts the
current density as a function of local bias applied to the p-n junction and
provides such important characteristics as internal quantum efficiency
(IQE), emission spectrum, and detailed information on the carrier
distribution across the heterostructure. SiLENSe is a tool for
heterostructure development and optimization, and can be useful for both
device and crystal growth engineers.
The SpeCLED package
provides 3D analysis of current crowding and temperature distribution in
the LED dice fabricated on either insulating or conductive substrate. It
supports simulation of planar and vertical chips with one-side and
two-side electrode configurations. The package enables optimization of
both blocking and ITO-like spreading layers that have become important
units of advanced LED chips. SpeCLED uses the computational results
obtained by SiLENSe to specify the current density as a function of local
bias applied to the active region and supposes Ohmic behaviour of neutral
contact layers far from the active region. This tool is widely used for
optimization of contact electrode geometry and predicts the actual
temperature of the active region as a function of operation conditions.
RATRO
(Ray-Tracing Simulator of Light Propagation) is a 3D ray-tracing simulator
of light propagation, absorption, and extraction from the LED die. The
RATRO package uses the information on the light emission intensity
distribution in the LED active region obtained by SpeCLED. Then the
package computes the light intensity distribution over all the die
surfaces, the far-field distribution, and integral chip characteristics
like extraction efficiency, total light output, light polarization, etc.
The ray-tracing model accounts for the light refraction, reflection, and
absorption on both smooth and rough surfaces/interfaces, using advanced
optical models of regular/random surface patterning.
The SimuLED package combines user-friendly, easy-to-learn interface and
tools facilitating set up of the problem. Advanced grid generator allows the
user to account for specific features of heterostructure and chip geometry.
Automatic grid generation shortens and considerably facilitates the
preparation of computations, which saves time and efforts of users. Built-in
visualization tools allow immediate and detailed inspection of the simulation
results. SimuLED is used now all over the world by epi-engineers and chip
designers in their everyday work even if they are not experts in numerical
simulations. It can give valuable insight into the device operation and
provide guidelines for its optimization.
Key Publications
GaN-based devices
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K. A. Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, and S. Yu. Karpov
Simulation of light-emitting diodes for new
physics understanding and device design
“Light-Emitting Diodes: Materials, Devices and Applications for Solid-
State Lighting XVI”, Proc. of SPIE, vol. 8278 (2012)
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Sergey Yu. Karpov
Modeling of III-nitride Light-Emitting Diodes:
Progress, Problems, and Perspectives
Proc. of SPIE, vol. 7939 (2011) 79391C / DOI 10.1117/12.872842
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Sergey Yu. Karpov
Effect of localized states on internal quantum
efficiency of III-nitride LEDs
Phys. Status Solidi RRL 4, No.11, 320–322 (2010) / DOI 10.1002/pssr.201004325
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K. A. Bulashevich, O. V. Khokhlev, M. V. Bogdanov, M. S. Ramm, I. Yu. Evstratov,
and S. Yu. Karpov
Comparison of Alternative Approaches to High-Power
Thin-Film LED Chip Design
Proceedings of the Second International Conference on White LEDs and Solid State Lighting, Taipei (2009)
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M. V. Bogdanov, K. A. Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, M. S. Ramm,
and S. Yu. Karpov
Current
crowding effect on light extraction efficiency
of thin-film LEDs
phys. stat. solidi (c) 7, No 7–8, 2124–2126 (2010)
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M. V. Bogdanov, K. A. Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, M. S. Ramm,
and S. Yu. Karpov
Effect of ITO spreading layer on performance of blue
light-emitting diodes
phys. stat. solidi (c) 7, No 7-8, 2127–2129 (2010)
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K.A. Bulashevich, M.S. Ramm, and S.Yu. Karpov
Effects
of electron and optical confinement on performance of UV laser diodes
phys. stat. solidi (c) 6, No 2, 603–606 (2009)
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M.V. Bogdanov, K.A. Bulashevich, I.Yu. Evstratov, S.Yu. Karpov
Current spreading, heat transfer, and light extraction in multipixel
LED array
phys. stat. solidi (c) 5, No. 6, 2070–2072 (2008)
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K.A. Bulashevich and S.Yu. Karpov
Is Auger recombination responsible for the efficiency rollover in
III-nitride light-emitting diodes?
phys. stat. solidi (c) 5, No. 6, 2066–2069 (2008)
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K.A. Bulashevich, M.S. Ramm, and S.Yu. Karpov
Assessment of various LED structure designs for
high-current operation
phys. stat. solidi (c) (2008)
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K.A. Bulashevich, I.Yu. Evstratov, V.F. Mymrin, S.Yu. Karpov
Current spreading and thermal effects in blue LED dice
phys. stat. solidi (c) 4, No. 1, 45–48 (2007)
- V.F. Mymrin, K.A. Bulashevich, N.I. Podolskaya, I.A. Zhmakin, S.Yu. Karpov,
and Yu.N. Makarov
Modelling study of MQW LED operation
phys. stat. sol. (c) 2, 2928-2931 (2005).
ZnO-based devices and hybrid II-O/III-N devices
- J.W. Mares, M. Falanga, A.V. Thompson, A. Osinsky, J.Q. Xie, B. Hertog,
A. Dabiran, P.P. Chow, S. Karpov, and W.V. Schoenfeld
Hybrid CdZnO/GaN quantum-well light emitting diodes
J. Appl. Phys. 104, 093107 (2008).
- K.A. Bulashevich, I.Yu. Evstratov, and S.Yu. Karpov
Hybrid ZnO/III-nitride light-emitting diodes: modelling analysis of operation
phys. stat. solidi (a) 204, No. 1, 241–245 (2007).
- K.A. Bulashevich, I.Yu. Evstratov, V.N. Nabokov, S.Yu. Karpov
Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode
Appl. Phys. Lett 87, No. 24, 243502 (2005).
Conventional III-V compounds
- K.A. Bulashevich, V.F. Mymrin, S.Yu. Karpov
Effect of Free-Carrier Absorption on Performance of 808 nm AlGaAs-Based High-Power Laser Diodes
Semcond. Sci. Technol. 22, No 5, 502-510 (2007).
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