Fig. 1. Crystallization rate distribution over the crystallization front

 

T(K) Fig. 2. Temperature distribution in the melt

 

COxy(cm-3) Fig. 3. Distribution of the Oxygen concentration in the melt

 

300 mm Czochralski Silicon growth

The effect of melt convection on the formation of the crystallization front is especially pronounced in the case of 300 mm Si growth. Here, unlike the case of 100 mm CZ Si growth, heat and mass transfer is mostly governed by turbulent flow structures. Essential 3D features of the turbulent melt fluctuations, especially under the crystal, result in non-uniform heat supply into the crystallization front and, therefore, strongly non-uniform and unsteady crystallization rate distribution, see Figures 1-3. These phenomena can be directly modeled in 3D unsteady analysis. Our 3D unsteady approach implemented in CGSim was successfully applied to simulate industrial growth of 300 mm diameter crystals, see [1, 2] for details.

Fig. 4. Computed crystallization front geometries compared to the experimental data.

 

1. "Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations", V.V. Kalaev, D.P. Lukanin, V.A. Zabelin, Yu.N. Makarov, J. Virbulis, E. Dornberger, W. von Ammon, J. Crystal Growth, 250/1-2 (2003) pp. 203-208.

2. "Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth", D.P. Lukanin, V.V. Kalaev, Yu. N. Makarov, T. Wetzel, J. Virbulis, and W. von Ammon, J. Crystal Growth, 266/1-3 (2004) pp. 20 – 27.