November 6-8, 2013
NCCG-43
www.jacg.jp/jacg/japanese/frame_main/18/nccg-43/index2013.html
Nagano,
Japan

November 2-4, 2013
JSME 26th Computational Mechanics Division Conference
www.jsme.or.jp/conference/cmdconf13/
Saga University at Saka prefecture,
Japan

September 30 - October 4, 2013
28th European Photovoltaic Solar Energy Conference and Exhibition (28th EU PVSEC)
www.photovoltaic-conference.com
Parc des Expositions Paris Nord Villepinte,
Paris, France

September 29 - October 4, 2013
The International Conference on Silicon Carbide and Related Materials ICSCRM2013
http://icscrm2013.org/index.php
Phoenix Seagaia Resort, Miyazaki, Japan

August 11-16, 2013
17th International Conference on Crystal Growth and Epitaxy ICCGE-17
http://science24.com/event/iccge17/
Warsaw, Poland
Materials presented by STR include:
1. Optimization of bottom heater parameters at growth of large BGO crystals by conventional czochralski method
2. Modeling of dislocation dynamics and facet formation in VGF of GaAs
3. Evolution of sapphire melt convection at the transition to large scale Ky technology.
4. Unidirection solidification of multicrystalline silicon under conditions of reduce gas flow exchange.
5. Numerical study of dislocation formation during transient growth of multi-Si by the direct solidification technique.
6. Computational analysis of precipitates, parasitic deposits and gas-to-particle conversion during Cz and DS Si-crystal growth.
7. Simulation of facet formation during Czochralski growth of YAG and GGG.

August 4-9, 2013
8th Pacific Rim International Congress on Advanced Materials and Processing (PRICM-8)
www.tms.org/meetings/specialty/pricm8/home.aspx
Hilton Waikoloa Village
Waikoloa, Hawaii

August 25-30, 2013
10th International Conference on Nitride Semiconductors
www.icns10.org
Gaylord National Hotel and Convention Center
Washington, D.C.
Materials presented by STR include:
New Mechanism of Stress Relaxation in (0001)InGaN-based Heterostructures

July 21-26, 2013
The 19th American Conference on Crystal Growth and Epitaxy in conjunction with The 16th US Biennial Workshop on Organometallic Vapor Phase Epitaxy
crystalgrowth.us/accge19/index.php
Keystone, Colorado
Materials presented by STR include:
1. Formation of particles and parasitic deposits in Cz Si and DS mc-Si crystal growth.
2. On Mechanisms Governing AlN and AlGaN Growth Rate and Composition in Large Substrate Size Planetary MOVPE Reactors

June 2-5, 2013
15th European Workshop on Metalorganic Vapour Phase Epitaxy
www.jara.org/index.php?id=606
Technology Centre at the Europaplatz
Aachen, Germany
Materials presented by STR include:
1. Fast MOVPE of III-nitride Materials at Super-atmospheric Pressure in Horizontal Flow Reactor
2. AlN Growth Modelling in a Planetary Reactor on Large Substrates

May 13-16, 2013
CSManTech
www.csmantech.org
Hilton New Orleans Riverside,
New Orleans, Louisiana, USA